当社の
半導体デバイス3次元TCADシステム Advance/TCAD のユーザー様、明治大学  教授 堤 利幸 様が、

Advance/TCAD を用いた研究成果

を発表されました。

  1. Toshiyuki Tsutsumi and Jaeyup Lee,
    "Study of threshold voltage fluctuation caused by source and drain extensions
    doping variation of tri-gate fin-type FET using three-dimensional device simulation",
    2014 Japanese Journal of Applied Physics, 53, 06JE06.
    [Abstract]
  2. Toshiyuki Tsutsumi,
    "Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation
    to source and drain extensions",
    2019 Japanese Journal of Applied Physics 58, SDDE06.
    [Abstract]
  3. Toshiyuki Tsutsumi,
    "Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator
    triple-gate fin-type field-effect transistors",
    2020 Japanese Journal of Applied Physics 59, SIIE06.
    [Abstract]